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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 1/3 HSB1109 PNP EPITAXIAL PLANAR TRANSISTOR Features * Low frequency high voltage amplifier * Complementary pair with HSD1609 Absolute Maximum Ratings (Ta=25C) TO-126ML * Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Ta=25C) .................................................................................. 1.25 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage.................................................................................... -160 V BVCEO Collector to Emitter Voltage................................................................................. -160 V BVEBO Emitter to Base Voltage........................................................................................... -5 V IC Collector Current....................................................................................................... -100 mA Electrical Characteristics (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Cob Min. -160 -160 -5 60 30 Typ. 140 5.5 Max. -10 -2 -1.5 320 Unit V V V uA V V Test Conditions IC=-10uA IC=-1mA IE=-10uA VCB=-140V IC=-30mA, IB=-3mA IC=-10mA, VCE=-5V IC=-10mA, VCE=-5V IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V VCB=-10V, f=1MHz *Pulse Test: Pulse Width 380us, Duty Cycle2% MHz pF Classification Of hFE1 Rank Range B 60-120 C 100-200 D 160-320 HSB1109 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 2/3 Saturation Voltage & Collector Current 1000 125 C o Saturation Voltage (mV) 75 C 100 125 C o o hFE 25 C 100 75 C o o 25 C o hFE @ VCE=5V VCE(sat) @ IC=10IB 10 10 1 10 100 0.1 1 10 100 Collector Current-IC (mA) Collector Current-IC (mA) ON Voltage & Collector Current 1000 Capacitance & Reverse-Biased Voltage 100 25 C o ON Voltage (mV) 75 C 125 C o o Capacitance (Pf) 10 VBE(ON) @ VCE=5V Cob 100 0.1 1 10 100 1 0.1 1 10 100 Collector Current-IC (mA) Reverse Biased Voltage (V) Cutoff Frequency & Collector Current 1000 1 Safe Operating Area Cutoff Frequency (MHz).. . Collector Current (A) 0.1 PT=1 ms PT=100 ms 0.01 PT=1 s 100 fT @ VCE=5V 10 1 10 100 1000 0.001 1 10 100 1000 Collector Current (mA) Forward Voltage (V) HSB1109 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-126ML Dimension Marking: Spec. No. : HE6607 Issued Date : 1993.03.15 Revised Date : 2002.02.06 Page No. : 3/3 A H SB Rank Control Code B D E F 3 2 I G 1 J M L K O H Date Code 1109 C Style: Pin 1.Emitter 2.Collector 3.Base N 3-Lead TO-126ML Plastic Package HSMC Package Code: D *: Typical DIM A B C D E F G H Inches Min. Max. 0.1356 0.1457 0.0170 0.0272 0.0344 0.0444 0.0501 0.0601 0.1131 0.1231 0.0737 0.0837 0.0294 0.0494 0.0462 0.0562 Millimeters Min. Max. 3.44 3.70 0.43 0.69 0.87 1.12 1.27 1.52 2.87 3.12 1.87 2.12 0.74 1.25 1.17 1.42 DIM I J K L M N O Inches Min. Max. *0.1795 0.0268 0.0331 0.5512 0.5906 0.2903 0.3003 0.1378 0.1478 0.1525 0.1625 0.0740 0.0842 Millimeters Min. Max. *4.56 0.68 0.84 14.00 15.00 7.37 7.62 3.50 3.75 3.87 4.12 1.88 2.14 Notes: 1.Dimension and tolerance based on our Spec. dated Mar. 6,1995. 2.Controlling dimension: millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material: * Lead: 42 Alloy; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HSB1109 HSMC Product Specification |
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